Jinli Wang, D. Wheeler, Yan Yan, Jialin Zhao, S. Howard, A. Seabaugh
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Silicon tunnel diodes formed by proximity rapid thermal diffusion
We demonstrate the first silicon tunnel diodes formed using proximity rapid thermal diffusion and spin-on diffusants. Room temperature peak-to-valley current ratio (PVR) of 2 is obtained at approximately 100 A/cm/sup 2/ peak current density. Secondary ion mass spectroscopy is used to compare proximity rapid thermal diffusion with rapid thermal diffusion from spin-coated diffusants in direct contact with a device wafer. The proximity rapid thermal diffusion approach provides a cleaner wafer surface for subsequent processing and yields tunnel diodes with good local uniformity.
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