可配置σ - δ调制器的线性增强

A. Rusu, B. R. Jose, M. Ismail, H. Tenhunen
{"title":"可配置σ - δ调制器的线性增强","authors":"A. Rusu, B. R. Jose, M. Ismail, H. Tenhunen","doi":"10.1109/NEWCAS.2005.1496663","DOIUrl":null,"url":null,"abstract":"A highly linear sigma-delta modulator for dual-standard receivers is presented. The modulator makes use of low-distortion sigma-delta modulator architecture to attain high linearity over a wide bandwidth. The dual-band modulator employs a 2/sup nd/ order single-bit sigma-delta modulator with feedforward path for GSM mode and a 4/sup th/ order modified cascaded modulator with single-bit in the first stage and 4-bit in the second for WCDMA mode. The modulator is designed in TSMC 0.18/spl mu/m CMOS technology and operates at 1.8 supply voltage. It achieves in GSM/WCDMA mode a peak SNDR of 83/75dB, a 96/84dB SFDR and an IMD3 of -93/-82dB for an OSR of 160/16.","PeriodicalId":131387,"journal":{"name":"The 3rd International IEEE-NEWCAS Conference, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Linearity enhancement in a configurable sigma-delta modulator\",\"authors\":\"A. Rusu, B. R. Jose, M. Ismail, H. Tenhunen\",\"doi\":\"10.1109/NEWCAS.2005.1496663\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly linear sigma-delta modulator for dual-standard receivers is presented. The modulator makes use of low-distortion sigma-delta modulator architecture to attain high linearity over a wide bandwidth. The dual-band modulator employs a 2/sup nd/ order single-bit sigma-delta modulator with feedforward path for GSM mode and a 4/sup th/ order modified cascaded modulator with single-bit in the first stage and 4-bit in the second for WCDMA mode. The modulator is designed in TSMC 0.18/spl mu/m CMOS technology and operates at 1.8 supply voltage. It achieves in GSM/WCDMA mode a peak SNDR of 83/75dB, a 96/84dB SFDR and an IMD3 of -93/-82dB for an OSR of 160/16.\",\"PeriodicalId\":131387,\"journal\":{\"name\":\"The 3rd International IEEE-NEWCAS Conference, 2005.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 3rd International IEEE-NEWCAS Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS.2005.1496663\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 3rd International IEEE-NEWCAS Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2005.1496663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

提出了一种适用于双标准接收机的高线性σ - δ调制器。该调制器采用低失真σ - δ调制器结构,在宽带宽下实现高线性度。所述双频调制器采用具有前馈路径的2/sup和/阶单比特σ - δ调制器用于GSM模式,并采用具有第一级单比特和第二级4比特的4/sup /阶修改级联调制器用于WCDMA模式。该调制器采用TSMC 0.18/spl mu/m CMOS工艺设计,工作电压为1.8。在GSM/WCDMA模式下,峰值SNDR为83/75dB, SFDR为96/84dB, IMD3为-93/-82dB, OSR为160/16。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Linearity enhancement in a configurable sigma-delta modulator
A highly linear sigma-delta modulator for dual-standard receivers is presented. The modulator makes use of low-distortion sigma-delta modulator architecture to attain high linearity over a wide bandwidth. The dual-band modulator employs a 2/sup nd/ order single-bit sigma-delta modulator with feedforward path for GSM mode and a 4/sup th/ order modified cascaded modulator with single-bit in the first stage and 4-bit in the second for WCDMA mode. The modulator is designed in TSMC 0.18/spl mu/m CMOS technology and operates at 1.8 supply voltage. It achieves in GSM/WCDMA mode a peak SNDR of 83/75dB, a 96/84dB SFDR and an IMD3 of -93/-82dB for an OSR of 160/16.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信