晶体管负输入阻抗的负载-拉力测量

F. de Groote, J. Verspecht, J. Teyssier, R. Quéré
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引用次数: 3

摘要

本文提出了一种基于测量的预测晶体管非线性效应的方法。对于某些特定的无源负载-拉力装置的输出阻抗,可以得到一种奇怪的输出/引脚斜率的行为。由于LSNA可以测量非线性输入阻抗,这有助于解释这一现象。在这些特定位点,GaN HEMT的时域斜率高达3.5 W/mm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Load-pull measurement of transistor negative input impedance
This paper presents a measurement-based way of forecasting some transistor's nonlinear effects. For some particular output impedances of the passive load-pull setup, a strange behavior of the Pout/Pin slopes can be obtained. Thanks to the LSNA, the non linear input impedance can be measured, it is useful to explain this phenomenon. The time domain slopes of a GaN HEMT up to 3.5 W/mm are proposed at these particular loci.
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