NRZ和PAM4信令方案对信道插入损耗偏差的敏感性

2017 IEEE 26th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) Pub Date : 2017-10-01 DOI:10.1109/EPEPS.2017.8329746

Giorgi Maghlakelidze, Santhosh Ranga Chavalla, N. Dikhaminjia, J. Drewniak

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引用次数: 1

摘要

本文讨论了高速链路设计中信道插入损耗偏差(ILD)对二进制和多级信令的影响。概述了多级传输线中的ILD现象，并对其来源进行了讨论。对不同ILD量的通道进行了对比试验。对测试通道进行了模拟，以模拟带子卡的背板通道。在模型中引入了阻抗失配和互连寄生效应，以产生明显的ILD。结果分析了由于ILD引起的ISI噪声导致的眼图退化。

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Sensitivity of NRZ and PAM4 signaling schemes to channel insertion loss deviation

Paper discusses channel Insertion Loss Deviation (ILD) effects on binary and multi-level signaling in high-speed link design. Overview of ILD phenomenon is given and its sources in a multi-stage transmission line are discussed. Comparison tests are provided for channels with different amount of ILD. The test channels were simulated to mimic backplane channels with daughter cards. In order to cause significant ILD, impedance mismatches and interconnect parasitic effects were introduced into the model. Results are analyzed in terms of eye diagram degradations due to ILD induced ISI noise.

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来源期刊

2017 IEEE 26th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)

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