{"title":"采用硅锗技术的91 GHz接收机前端","authors":"Jihwan Kim, J. Alvarado, K. Kornegay","doi":"10.1109/RFIC.2008.4561426","DOIUrl":null,"url":null,"abstract":"A W-band receiver front-end, including a low-noise amplifier (LNA), a coupled-wire Marchand balun and a double-balanced mixer, has been designed and fabricated in IBMpsilas 8 HP 0.12 mum, 200 GHz-fT SiGe technology. The circuit operates in the 87-94 GHz frequency range with a peak conversion gain of 36.3 dB and a minimum single side-band (SSB) noise figure of 10 dB. At 91 GHz the measured 1 dB input compression point is -36 dBm. The entire circuit occupies 1.82 mm2 including bond pads and dissipates only 109.7 mW. To the authorspsila knowledge this front-end achieves the highest conversion gain among published receiver front-ends in silicon-based technology operating beyond 90 GHz.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"452 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 91 GHz receiver front-end in silicon-germanium technology\",\"authors\":\"Jihwan Kim, J. Alvarado, K. Kornegay\",\"doi\":\"10.1109/RFIC.2008.4561426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A W-band receiver front-end, including a low-noise amplifier (LNA), a coupled-wire Marchand balun and a double-balanced mixer, has been designed and fabricated in IBMpsilas 8 HP 0.12 mum, 200 GHz-fT SiGe technology. The circuit operates in the 87-94 GHz frequency range with a peak conversion gain of 36.3 dB and a minimum single side-band (SSB) noise figure of 10 dB. At 91 GHz the measured 1 dB input compression point is -36 dBm. The entire circuit occupies 1.82 mm2 including bond pads and dissipates only 109.7 mW. To the authorspsila knowledge this front-end achieves the highest conversion gain among published receiver front-ends in silicon-based technology operating beyond 90 GHz.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"452 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561426\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 91 GHz receiver front-end in silicon-germanium technology
A W-band receiver front-end, including a low-noise amplifier (LNA), a coupled-wire Marchand balun and a double-balanced mixer, has been designed and fabricated in IBMpsilas 8 HP 0.12 mum, 200 GHz-fT SiGe technology. The circuit operates in the 87-94 GHz frequency range with a peak conversion gain of 36.3 dB and a minimum single side-band (SSB) noise figure of 10 dB. At 91 GHz the measured 1 dB input compression point is -36 dBm. The entire circuit occupies 1.82 mm2 including bond pads and dissipates only 109.7 mW. To the authorspsila knowledge this front-end achieves the highest conversion gain among published receiver front-ends in silicon-based technology operating beyond 90 GHz.
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