Ao Yu, Yuechi Ma, Zehao Wang, Xiangxiang Ding, Yulin Feng, Lifeng Liu
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引用次数: 1
摘要
在本工作中，制备并研究了TiN/TaON/SiO2/Pt和TiN/TaON/Pt RRAM器件。与TiN/TaON/Pt控制器件相比，插入SiO2薄膜的TiN/TaON/SiO2/Pt RRAM器件在设定的符合电流为1mA时显示出更大的(x10)电阻窗口。TiN/TaON/SiO2/Pt RRAM器件具有低功耗电阻开关特性，其定值功率接近28.5µW (5.7V 5µA)，复位功率接近5.4µW (5.4 v 1µA)。演示了低功率电阻开关在106下的持久特性。在TiN/TaON/SiO2/Pt RRAM器件中，所插入的SiO2薄膜可以起到限流层的作用，实现低功耗电阻开关特性。
Low-Power Resistive Switching Characteristics in TiN/TaON/SiO2/Pt RRAM devices for Neuromorphic Applications
In this work, the TiN/TaON/SiO2/Pt and TiN/TaON/Pt RRAM devices are fabricated and investigated. Compared with the TiN/TaON/Pt control device, TiN/TaON/SiO2/Pt RRAM devices with inserted SiO2 thin film show larger (x10) resistive window at the set compliance current of 1mA. TiN/TaON/SiO2/Pt RRAM devices show low-power resistive switching characteristic with set power of nearly 28.5µW (5.7V 5µA) and reset power of nearly 5.4µW (5.4V 1µA). Endurance characteristic with low-power resistive switching over 106 is demonstrated. The inserted SiO2 thin film may play the role of current limiting layer to achieve the low-power resistive switching characteristics in TiN/TaON/SiO2/Pt RRAM devices.
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