利用化学浴沉积(CBD)技术在硫酸板上生长ZnSnO3纳米晶体,用于自供电紫外传感

Anannya Bhattacharya, Susomon Dutta, Sreeparna Paul, Subhrajit Sikdar, S. Chattopadhyay
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引用次数: 0

摘要

本文研究了采用双步化学浴沉积法制备的多晶氧化锌锡(ZnSnO3)纳米晶体的紫外传感性能。FESEM图像证实了在p-Si[100]衬底上形成立方ZnSnO3结构。用x射线衍射、紫外-可见分光光度法和椭偏测量法研究了这种晶体的晶体取向和光学性质。在带隙为3.6 eV对应的波长区域,得到了cbd生长的ZnSnO3的吸收系数为2.1 × 105/m。在黑暗和光照条件下的电流-电压(I-V)特性揭示了自偏置异质结器件作为紫外线光电探测器的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of ZnSnO3 nano-crystalloids on Sisubstrate by employing chemical bath deposition (CBD) technique for self-powered UV-light sensing applications
In the current work, UV-light sensing property of poly-crystalline Zinc-Tin-Oxide (ZnSnO3)nano-crystalloids grown by employing double-step chemical bath deposition technique has been investigated. The formation of cubic ZnSnO3 structure on p-Si [100] substrate has been confirmed by FESEM images. Crystallographic orientation and optical properties of such crystalloids are studied by X-ray diffraction, UV-VIS spectrophotometry and ellipsometric measurements. Absorption coefficient of the CBD-grown ZnSnO3 is obtained to be 2.1 × 105/m, at the wavelength region corresponding to its band gap of 3.6 eV. The current-voltage (I-V) characteristic under both dark and illuminated condition reveals the ability of the self-biased heterojunction device to be used as UV-ray photo-detector.
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