0.35 /spl mu/m, 43 /spl mu//spl Omega/cm/sup 2/， 6 m/spl Omega/功率MOSFET为未来的微处理器供电

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764058

N. Sun, A.Q. Huang, F.C. Lee

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引用次数: 3

摘要

在本文中，采用0.35 /spl mu/m VLSI CMOS技术的横向功率MOSFET被证明具有6 m/spl ω /导通电阻和2.7 nC栅极电荷。对于高频、低压功率开关转换应用，基于深亚微米CMOS/BiCMOS的技术明显优于传统的垂直功率MOSFET技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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0.35 /spl mu/m, 43 /spl mu//spl Omega/cm/sup 2/, 6 m/spl Omega/ power MOSFET to power future microprocessor

In this paper, a lateral power MOSFET using 0.35 /spl mu/m VLSI CMOS technology is demonstrated to have a 6 m/spl Omega/ on-resistance and a gate charge of 2.7 nC. For high frequency, low voltage power switching conversion applications, the deep sub-micron CMOS/BiCMOS based technology is clearly superior to conventional vertical power MOSFET technology.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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