GaAs器件中重离子数据的质子横截面

D. L. Hansen
{"title":"GaAs器件中重离子数据的质子横截面","authors":"D. L. Hansen","doi":"10.1109/NSREC.2017.8115468","DOIUrl":null,"url":null,"abstract":"This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Proton cross-sections from heavy-ion data in GaAs devices\",\"authors\":\"D. L. Hansen\",\"doi\":\"10.1109/NSREC.2017.8115468\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.\",\"PeriodicalId\":284506,\"journal\":{\"name\":\"2017 IEEE Radiation Effects Data Workshop (REDW)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radiation Effects Data Workshop (REDW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSREC.2017.8115468\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2017.8115468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文报道了利用GaAs器件中重离子数据计算质子SEU截面的方法。使用了许多不同的模型,但在每一个模型中,必须作出调整,以说明砷化镓的密度和电离能不同于硅的事实。利用已发表文献中的质子和重离子横截面数据来检验模型的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Proton cross-sections from heavy-ion data in GaAs devices
This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信