{"title":"功率HBT为44 GHz操作","authors":"D. Deakin, W. Ho, E. Sovero, J. Higgins","doi":"10.1109/GAAS.1993.394431","DOIUrl":null,"url":null,"abstract":"The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special layer systems were necessary for these devices to provide excellent performance at 44 GHz. Power added efficiencies of 30% at power outputs of 250 mW and small signal gains of over 10 dB are reported. These performance levels are demonstrated by devices obtained from a high yield potentially low cost process.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Power HBT for 44 GHz operation\",\"authors\":\"D. Deakin, W. Ho, E. Sovero, J. Higgins\",\"doi\":\"10.1109/GAAS.1993.394431\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special layer systems were necessary for these devices to provide excellent performance at 44 GHz. Power added efficiencies of 30% at power outputs of 250 mW and small signal gains of over 10 dB are reported. These performance levels are demonstrated by devices obtained from a high yield potentially low cost process.<<ETX>>\",\"PeriodicalId\":347339,\"journal\":{\"name\":\"15th Annual GaAs IC Symposium\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"15th Annual GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1993.394431\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394431","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special layer systems were necessary for these devices to provide excellent performance at 44 GHz. Power added efficiencies of 30% at power outputs of 250 mW and small signal gains of over 10 dB are reported. These performance levels are demonstrated by devices obtained from a high yield potentially low cost process.<>
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