在N/sub - 2/环境下使用CBr/sub - 4/、TBA和TBP的InP基HBT新MOVPE工艺

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773755

D. Keiper, U. Eriksson, R. Westphalen, G. Landgren

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引用次数: 0

摘要

利用TBA、CBr/ sub4 /在N/ sub2 /中生长掺杂碳的InGaAs/InP。利用SiH/sub 4/， InGaAs的n掺杂均匀性的标准偏差小于1%。最大碳掺杂水平达到10/sup 20/ cm/sup -3/，与MBE技术相当。掺入6.5/spl倍/10/sup 18/ cm/sup 3/ /基层的HBTs，在550/spl度/C下生长，显示出130的电流放大。

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New MOVPE process for InP based HBT's using CBr/sub 4/, TBA and TBP in N/sub 2/ ambient

Carbon doped InGaAs/InP was grown utilising TBA, CBr/sub 4/ in N/sub 2/. The n-doping uniformity for InGaAs shows a standard deviation of less than 1%, utilising SiH/sub 4/. Maximum carbon doping levels of 10/sup 20/ cm/sup -3/ were achieved, comparable to MBE techniques. HBTs with 6.5/spl times/10/sup 18/ cm/sup 3/ doped base layers, grown at 550/spl deg/C, show current amplifications of 130.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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