{"title":"用于Gb/s光波系统的单片NMOS AGC放大器","authors":"R. Jindal, E. Hofstatter, O. Mizuhara","doi":"10.1109/ISSCC.1987.1157135","DOIUrl":null,"url":null,"abstract":"A cascade of 8 gain-controlled stages providing a maximum gain of 50dB and a 70dB dynamic range will be reported A 900MHz bandwidth has been attained in an NMOS chip employing 0.75μm gate lengths, with a power dissipation of 250mW.","PeriodicalId":102932,"journal":{"name":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"148 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Single-chip NMOS AGC amplifiers for Gb/s lightwave systems\",\"authors\":\"R. Jindal, E. Hofstatter, O. Mizuhara\",\"doi\":\"10.1109/ISSCC.1987.1157135\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A cascade of 8 gain-controlled stages providing a maximum gain of 50dB and a 70dB dynamic range will be reported A 900MHz bandwidth has been attained in an NMOS chip employing 0.75μm gate lengths, with a power dissipation of 250mW.\",\"PeriodicalId\":102932,\"journal\":{\"name\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"148 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1987.1157135\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1987.1157135","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-chip NMOS AGC amplifiers for Gb/s lightwave systems
A cascade of 8 gain-controlled stages providing a maximum gain of 50dB and a 70dB dynamic range will be reported A 900MHz bandwidth has been attained in an NMOS chip employing 0.75μm gate lengths, with a power dissipation of 250mW.