静电放电下CMOS I/O电路寄生bjt的自动提取

T. Li, Y. Huh, S. Kang
{"title":"静电放电下CMOS I/O电路寄生bjt的自动提取","authors":"T. Li, Y. Huh, S. Kang","doi":"10.1109/IRWS.1997.660296","DOIUrl":null,"url":null,"abstract":"The layout of chip I/O heavily relies on design expertise and guidelines due to the lack of supporting CAD tools. Visual inspection of layout by experts to pinpoint design or layout flaws is common industrial practice for I/O verification. In order to meet industrial demand for I/O verification tools, we have developed a layout extractor which targets the reliability issues of CMOS chip I/Os, with specific emphasis on electrostatic discharge (ESD). In this paper, we present an automated systematic approach for identification of parasitic bipolar junction transistors (BJTs) under ESD stress. The extracted circuit netlist can be simulated by an ESD circuit-level simulator.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Automated extraction of parasitic BJTs for CMOS I/O circuits under ESD stress\",\"authors\":\"T. Li, Y. Huh, S. Kang\",\"doi\":\"10.1109/IRWS.1997.660296\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The layout of chip I/O heavily relies on design expertise and guidelines due to the lack of supporting CAD tools. Visual inspection of layout by experts to pinpoint design or layout flaws is common industrial practice for I/O verification. In order to meet industrial demand for I/O verification tools, we have developed a layout extractor which targets the reliability issues of CMOS chip I/Os, with specific emphasis on electrostatic discharge (ESD). In this paper, we present an automated systematic approach for identification of parasitic bipolar junction transistors (BJTs) under ESD stress. The extracted circuit netlist can be simulated by an ESD circuit-level simulator.\",\"PeriodicalId\":193522,\"journal\":{\"name\":\"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.1997.660296\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1997.660296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

由于缺乏辅助CAD工具,芯片I/O的布局严重依赖于设计专业知识和指导方针。由专家对布局进行视觉检查以查明设计或布局缺陷是I/O验证的常见工业实践。为了满足工业对I/O验证工具的需求,我们开发了一种针对CMOS芯片I/O可靠性问题的布局提取器,特别强调静电放电(ESD)。在本文中,我们提出了一种自动系统的方法来识别寄生双极结晶体管(BJTs)在ESD应力下。所提取的电路网表可以用ESD电路级模拟器进行仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Automated extraction of parasitic BJTs for CMOS I/O circuits under ESD stress
The layout of chip I/O heavily relies on design expertise and guidelines due to the lack of supporting CAD tools. Visual inspection of layout by experts to pinpoint design or layout flaws is common industrial practice for I/O verification. In order to meet industrial demand for I/O verification tools, we have developed a layout extractor which targets the reliability issues of CMOS chip I/Os, with specific emphasis on electrostatic discharge (ESD). In this paper, we present an automated systematic approach for identification of parasitic bipolar junction transistors (BJTs) under ESD stress. The extracted circuit netlist can be simulated by an ESD circuit-level simulator.
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