采用体垂直通道双极结晶体管(BJT)型无电容1T-DRAM电池抑制自热效应

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI:10.1109/S3S.2013.6716574

T. Imamoto, T. Endoh

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引用次数: 1

摘要

与20纳米代SOI平面型相比，块状垂直通道双极结晶体管(BJT)型1T-DRAM具有优异的热特性。块状垂直型可以在26K的晶格温度升高(ΔTLmax)和1.8μA/cell的足够高的读电流裕度下工作，而平面型SOI则可以在58K的ΔTLmax值上工作。

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Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell

Excellent thermal characteristics of the bulk vertical-channel bipor junction transistor (BJT) type 1T-DRAM compared to the SOI planar type with 20nm generation. The bulk vertical type can operate with the low increase of lattice temperature (ΔT_L^max) of 26K and high enough read current margin of 1.8μA/cell, while the SOI planar type shows large ΔT_L^max value of 58K.

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2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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