Chih-Hung Chen, M. Jamal Deen, M. Matloubian, Yuhua Cheng
{"title":"深亚微米mosfet的通道噪声电流","authors":"Chih-Hung Chen, M. Jamal Deen, M. Matloubian, Yuhua Cheng","doi":"10.1109/ESSDERC.2000.194826","DOIUrl":null,"url":null,"abstract":"An extraction method to obtain the channel noise current in deep-submicron MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. Extracted channel thermal noise from long channel devices is consistent with the long channel theory (id 2/∆f = γ 4kTgdo with γ =2/3 in saturation). The value of γ can increase up to 1.3 for a 0.18μm device. Extracted channel thermal noise as a function of bias for five different channel lengths is also presented.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"1 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Channel Noise Current in Deep Sub-Micron MOSFETs\",\"authors\":\"Chih-Hung Chen, M. Jamal Deen, M. Matloubian, Yuhua Cheng\",\"doi\":\"10.1109/ESSDERC.2000.194826\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An extraction method to obtain the channel noise current in deep-submicron MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. Extracted channel thermal noise from long channel devices is consistent with the long channel theory (id 2/∆f = γ 4kTgdo with γ =2/3 in saturation). The value of γ can increase up to 1.3 for a 0.18μm device. Extracted channel thermal noise as a function of bias for five different channel lengths is also presented.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"1 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194826\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194826","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An extraction method to obtain the channel noise current in deep-submicron MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. Extracted channel thermal noise from long channel devices is consistent with the long channel theory (id 2/∆f = γ 4kTgdo with γ =2/3 in saturation). The value of γ can increase up to 1.3 for a 0.18μm device. Extracted channel thermal noise as a function of bias for five different channel lengths is also presented.
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