400ghz FMAX InP/GaAsSb HBT毫米波应用

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5515954

V. Nodjiadjim, M. Riet, A. Scavennec, P. Berdaguer, S. Piotrowicz, O. Jardel, J. Godin, P. Bove, M. Lijadi

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引用次数: 5

摘要

本文介绍了用于毫米波应用的多指InP/GaAsSb/InP HBTs。0.7×10µm2发射极尺寸4指和8指器件的fT和fmax分别高于200 GHz和400 GHz，电流增益为28，发射极击穿电压为7V。我们还报告了基于更保守器件(1×15µm2双发射极指)的两级功率放大器的性能。该电路在60 GHz时提供15 dBm以上的输出功率。

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400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications

This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 µm² emitter size 4- and 8- finger devices demonstrated fT and fmax above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 µm² two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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