低温制备高迁移率透明Al-Sn-Zn-O薄膜晶体管

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839671

Y. Cong, Dedong Han, D. Shan, Yu Tian, F. Huang, Suoming Zhang, Zhuofa Chen, Jing Wu, N. Zhao, F. Zhao, Junchen Dong, Shenmin Zhang, Xing Zhang, Yi Wang

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引用次数: 1

摘要

采用射频磁控溅射技术在低温玻璃衬底上制备了全透明的反交错铝锡共掺杂ZnO (ATZO)薄膜晶体管。研究了在不同氧分压下制备的ATZO tft的特性。ATZO TFTs表现出优异的性能，包括高场效应迁移率145.33 cm2/Vs，阈值电压为1.71 V，亚阈值摆幅为0.22 V/dec，通断电流比7.5×107。

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High mobility transparent Al-Sn-Zn-O thin film transistors fabricated at low temperature

Fully-transparent inverted-staggered Aluminum and Tin co-doped ZnO (ATZO) thin film transistors (TFTs) have been fabricated by RF magnetron sputtering on glass substrate at low temperature. The characteristics of ATZO TFTs fabricated at various partial pressures of oxygen are studied. The ATZO TFTs demonstrate excellent performance, including a high field effect mobility of 145.33 cm2/Vs, a threshold voltage of 1.71 V, a subthreshold swing of 0.22 V/dec and an on-to-off current ratio of 7.5×107.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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