{"title":"基于磁-电隧道结的模拟电路选项","authors":"N. Sharma, J. Bird, P. Dowben, A. Marshall","doi":"10.1109/SOCC.2017.8226032","DOIUrl":null,"url":null,"abstract":"The magneto-electric magnetic tunnel junction (ME-MTJ) is a voltage controlled beyond CMOS device based on the principle of ME anti-ferromagnetic (AFM) exchange biasing of chromia (Cr2O3) and the tunneling magnetoresistance (TMR) of a magnetic tunnel junction (fixed/free ferromagnet (FM) stack). These devices have previously been demonstrated for the implementation of digital logic and memory applications. We here demonstrate their analog capabilities with a variety of analog functions adapted specifically to the characteristics of ME-MTJ — based devices. The novel circuit options proposed in this paper includes a ME-MTJ based analog comparator and the two variations of an 8-level analog-to-digital converter (ADC) using serial and parallel ME-MTJ circuit configurations.","PeriodicalId":366264,"journal":{"name":"2017 30th IEEE International System-on-Chip Conference (SOCC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Magneto-electric magnetic tunnel junction based analog circuit options\",\"authors\":\"N. Sharma, J. Bird, P. Dowben, A. Marshall\",\"doi\":\"10.1109/SOCC.2017.8226032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The magneto-electric magnetic tunnel junction (ME-MTJ) is a voltage controlled beyond CMOS device based on the principle of ME anti-ferromagnetic (AFM) exchange biasing of chromia (Cr2O3) and the tunneling magnetoresistance (TMR) of a magnetic tunnel junction (fixed/free ferromagnet (FM) stack). These devices have previously been demonstrated for the implementation of digital logic and memory applications. We here demonstrate their analog capabilities with a variety of analog functions adapted specifically to the characteristics of ME-MTJ — based devices. The novel circuit options proposed in this paper includes a ME-MTJ based analog comparator and the two variations of an 8-level analog-to-digital converter (ADC) using serial and parallel ME-MTJ circuit configurations.\",\"PeriodicalId\":366264,\"journal\":{\"name\":\"2017 30th IEEE International System-on-Chip Conference (SOCC)\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 30th IEEE International System-on-Chip Conference (SOCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCC.2017.8226032\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 30th IEEE International System-on-Chip Conference (SOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC.2017.8226032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Magneto-electric magnetic tunnel junction based analog circuit options
The magneto-electric magnetic tunnel junction (ME-MTJ) is a voltage controlled beyond CMOS device based on the principle of ME anti-ferromagnetic (AFM) exchange biasing of chromia (Cr2O3) and the tunneling magnetoresistance (TMR) of a magnetic tunnel junction (fixed/free ferromagnet (FM) stack). These devices have previously been demonstrated for the implementation of digital logic and memory applications. We here demonstrate their analog capabilities with a variety of analog functions adapted specifically to the characteristics of ME-MTJ — based devices. The novel circuit options proposed in this paper includes a ME-MTJ based analog comparator and the two variations of an 8-level analog-to-digital converter (ADC) using serial and parallel ME-MTJ circuit configurations.
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