嵌入式栅极IGBT结构

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764084

M. Nemoto, B. J. Baliga

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引用次数: 6

摘要

提出了一种嵌入式栅极(RG)结构，并首次将其与DMOS和UMOS-IGBT进行了性能比较。对于RG结构的制造，不需要执行UMOS-IGBT所需的困难多晶硅平面化步骤。RG-IGBT的击穿电压接近DMOS-IGBT，尽管它具有沟槽结构。与DMOS-IGBT相比，RG-IGBT具有更低的导通电压降，因为没有JFET电阻。RG-IGBT的寄生晶闸管锁存电流密度高于DMOS-IGBT。此外，RG-IGBT具有宽前向偏置SOA (FBSOA)。RG-IGBT的饱和电流密度比UMOS-IGBT低，具有优越的短路SOA (SC-SOA)性能。

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The recessed-gate IGBT structure

A recessed gate (RG) structure is presented for the IGBT and its characteristics are compared with DMOS and UMOS-IGBT for the first time. For the fabrication of the RG structure, it is not necessary to perform the difficult polysilicon planarization step required for the UMOS-IGBT. The breakdown voltage of the RG-IGBT is close to that of the DMOS-IGBT, even though it has a trench structure. The RG-IGBT has a lower on-state voltage drop when compared with the DMOS-IGBT because there is no JFET resistance. The parasitic thyristor latch-up current density of the RG-IGBT is higher than that of the DMOS-IGBT. In addition, the RG-IGBT has a wide forward bias SOA (FBSOA). The saturation current density of the RG-IGBT is lower than that of the UMOS-IGBT, leading to a superior short circuit SOA (SC-SOA).

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来源期刊

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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