M. Parihar, Fanyu Liu, C. Navarro, S. Barraud, M. Bawedin, I. Ionica, A. Kranti, S. Cristoloveanu
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Back-gate effects and detailed characterization of junctionless transistor
The work addresses effect of inter-gate coupling on back-channel characteristics of planar accumulation-mode junctionless (JL) MOSFETs, fabricated with advanced FDSOI technology. A systematic methodology to extract and discriminate the contributions of bulk and accumulation-mode mobility has been developed. Front-gate voltage strongly controls the properties of back channel in ultra-thin heavily doped JL devices. It has been demonstrated that both volume and accumulation-mode mobilities increase when the front surface is in accumulation.
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