{"title":"基于SiC MOSFET的变换器中栅极驱动共模电流影响的预测模型","authors":"M. Krishna, K. Hatua","doi":"10.1109/ISDCS.2018.8379648","DOIUrl":null,"url":null,"abstract":"Though desirable, fast switching speeds of SiC MOSFETs can cause significant common mode currents through the gate driver circuitry. This can deteriorate the signal integrity of the whole converter. The Present paper proposes a predictive model to estimate these common mode currents and the corruption in the signal integrity. Further, the presented model is used to investigate the impact of common mode choke placed at various positions in the gate driver. The predictions of the proposed model are verified both in simulation as well as in the hardware test set up.","PeriodicalId":374239,"journal":{"name":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A predictive model to investigate the effects of gate driver common mode currents in SiC MOSFET based converter\",\"authors\":\"M. Krishna, K. Hatua\",\"doi\":\"10.1109/ISDCS.2018.8379648\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Though desirable, fast switching speeds of SiC MOSFETs can cause significant common mode currents through the gate driver circuitry. This can deteriorate the signal integrity of the whole converter. The Present paper proposes a predictive model to estimate these common mode currents and the corruption in the signal integrity. Further, the presented model is used to investigate the impact of common mode choke placed at various positions in the gate driver. The predictions of the proposed model are verified both in simulation as well as in the hardware test set up.\",\"PeriodicalId\":374239,\"journal\":{\"name\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDCS.2018.8379648\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2018.8379648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A predictive model to investigate the effects of gate driver common mode currents in SiC MOSFET based converter
Though desirable, fast switching speeds of SiC MOSFETs can cause significant common mode currents through the gate driver circuitry. This can deteriorate the signal integrity of the whole converter. The Present paper proposes a predictive model to estimate these common mode currents and the corruption in the signal integrity. Further, the presented model is used to investigate the impact of common mode choke placed at various positions in the gate driver. The predictions of the proposed model are verified both in simulation as well as in the hardware test set up.
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