固溶体AlGaAs中摩尔组成对电子迁移率的影响

2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2022-10-10 DOI:10.1109/ELNANO54667.2022.9927087

V. Moskaliuk, V. Timofeyev, T. Saurova, Irina Baida, Taisiya Kozhevnikova

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引用次数: 0

摘要

本文研究了AlAs的摩尔组成对$\math {A}1_{x}\text{Ga} {1-x}\text{AS}$固溶体中霍尔电子迁移率的影响。在半导体能带三个谷的弛豫方程组的基础上进行了仿真。通过对电子散射率在分布函数上的平均，得到了各种散射机制的动量松弛时间。仿真结果与实验结果在功能上有较好的吻合。通过松弛方程的方法进行建模，可以揭示所研究的依赖性$\mu(x)$的特定特征，其形式是在值$0.44 < x < 0.48$范围内迁移率(“dip”)的显着降低。确定了一组初始仿真参数，使其与实验结果吻合较好。该方法也适用于其它三元半导体化合物。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of Molar Composition on Electron Mobility in Solid Solution AlGaAs

The influence of the AlAs molar composition on the Hall electron mobility in the $\mathrm{A}1_{x}\text{Ga}_{1-x}\text{AS}$ solid solution is studied in this work. The simulation was carried out on the basis of a relaxation equations system for three valleys of semiconductor energy bands. The momentum relaxation times for various scattering mechanisms are obtained by averaging the electron scattering rate over the distribution function. The simulation results were functionally more than satisfactorily agreed with the experiment. Modeling by the method of relaxation equations made it possible to reveal a specific feature of the studied dependence $\mu(x)$ in the form of a significant decrease in mobility (“dip”) in the range of values $0.44 < x < 0.48$. A set of initial simulation parameters has been defined, which makes it possible to obtain good agreement with the experimental results. The method is suitable for other ternary semiconductor compounds.

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2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)

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