{"title":"射频MEMS开关片上封装的高频寄生效应","authors":"A. Margomenos, L. Katehi","doi":"10.1109/MWSYM.2003.1210536","DOIUrl":null,"url":null,"abstract":"A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.3 dB up to 40 GHz (including a 2.7 mm long through line) and a return loss below -18 dB up to 40 GHz. The inclusion of the bonding ring and the dc bias lines creates parasitic resonances. This paper presents a detailed study of the package parasitics and provides solutions that can effectively eliminate them for frequencies up to 40 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"High frequency parasitic effects for on-wafer packaging of RF MEMS switches\",\"authors\":\"A. Margomenos, L. Katehi\",\"doi\":\"10.1109/MWSYM.2003.1210536\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.3 dB up to 40 GHz (including a 2.7 mm long through line) and a return loss below -18 dB up to 40 GHz. The inclusion of the bonding ring and the dc bias lines creates parasitic resonances. This paper presents a detailed study of the package parasitics and provides solutions that can effectively eliminate them for frequencies up to 40 GHz.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1210536\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High frequency parasitic effects for on-wafer packaging of RF MEMS switches
A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.3 dB up to 40 GHz (including a 2.7 mm long through line) and a return loss below -18 dB up to 40 GHz. The inclusion of the bonding ring and the dc bias lines creates parasitic resonances. This paper presents a detailed study of the package parasitics and provides solutions that can effectively eliminate them for frequencies up to 40 GHz.
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