{"title":"一种ka波段非对称堆叠fet MMIC Doherty功率放大器","authors":"Duy P. Nguyen, T. Pham, A. Pham","doi":"10.1109/RFIC.2017.7969102","DOIUrl":null,"url":null,"abstract":"We present a stacked-FET monolithic millimeter-wave (mmW) integrated circuit Doherty power amplifier (DPA). The DPA employs a novel asymmetrical stack gate bias to achieve high power and high efficiency at 6-dB power back-off (PBO). The circuit is fabricated in a 0.15-µm enhancement mode (E-mode) Gallium Arsenide (GaAs) process. Experimental results demonstrate output power at 1-dB gain compression (P1dB) of 28.2 dBm, peak power added efficiency (PAE) of 37% and PAE at 6-dB PBO of 27% at 28 GHz. Measured small signal gain is 15 dB while the 3-dB bandwidth covers from 25.5 to 29.5 GHz. Using digital predistortion (DPD) with a 20 MHz 64 QAM modulated signal, an adjacent channel power ratio (ACPR) of −46 dBc has been observed.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"A Ka-band asymmetrical stacked-FET MMIC Doherty power amplifier\",\"authors\":\"Duy P. Nguyen, T. Pham, A. Pham\",\"doi\":\"10.1109/RFIC.2017.7969102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a stacked-FET monolithic millimeter-wave (mmW) integrated circuit Doherty power amplifier (DPA). The DPA employs a novel asymmetrical stack gate bias to achieve high power and high efficiency at 6-dB power back-off (PBO). The circuit is fabricated in a 0.15-µm enhancement mode (E-mode) Gallium Arsenide (GaAs) process. Experimental results demonstrate output power at 1-dB gain compression (P1dB) of 28.2 dBm, peak power added efficiency (PAE) of 37% and PAE at 6-dB PBO of 27% at 28 GHz. Measured small signal gain is 15 dB while the 3-dB bandwidth covers from 25.5 to 29.5 GHz. Using digital predistortion (DPD) with a 20 MHz 64 QAM modulated signal, an adjacent channel power ratio (ACPR) of −46 dBc has been observed.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Ka-band asymmetrical stacked-FET MMIC Doherty power amplifier
We present a stacked-FET monolithic millimeter-wave (mmW) integrated circuit Doherty power amplifier (DPA). The DPA employs a novel asymmetrical stack gate bias to achieve high power and high efficiency at 6-dB power back-off (PBO). The circuit is fabricated in a 0.15-µm enhancement mode (E-mode) Gallium Arsenide (GaAs) process. Experimental results demonstrate output power at 1-dB gain compression (P1dB) of 28.2 dBm, peak power added efficiency (PAE) of 37% and PAE at 6-dB PBO of 27% at 28 GHz. Measured small signal gain is 15 dB while the 3-dB bandwidth covers from 25.5 to 29.5 GHz. Using digital predistortion (DPD) with a 20 MHz 64 QAM modulated signal, an adjacent channel power ratio (ACPR) of −46 dBc has been observed.
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