瞬态增强扩散有效附加因子的简单公式

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194741

G. Hobler, V. Moroz

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摘要

给出了硅中非非晶注入后瞬态增强扩散的有效附加因子的简单解析表达式。该公式描述了离子质量、植入能量和剂量依赖于数值计算的正因子，均方根误差为3%。本文讨论了数值数据的准确性，以及由于加因子的深度依赖性而可能产生的误差

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Simple Formulae for the Effective Plus-Factor for Transient Enhanced Diffusion

Simple analytical expressions for the effective plus-factor for transient enhanced diffusion after non-amorphizing implantations in silicon are presented. The formulae describe the ion mass, implant energy, and dose dependence of the numerically calculated plus-factor with a root mean square error of 3%. The accuracy of the numerical data as well as possible errors from a depth dependence of the plus-factor are dis-

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30th European Solid-State Device Research Conference

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