F. Vanaverbeke, W. De Raedt, D. Schreurs, M. Bossche
{"title":"实时非线性去嵌入","authors":"F. Vanaverbeke, W. De Raedt, D. Schreurs, M. Bossche","doi":"10.1109/ARFTG77.2011.6034573","DOIUrl":null,"url":null,"abstract":"High-efficiency operating modes (class B, F, D, E, etc.) of RF power-transistors can only be well understood and evaluated when the voltage and current time-domain waveforms at the level of the intrinsic current-generator of the transistor are known. Large-signal network analyzers (LSNA's) allow the measurement of time-domain waveforms at the extrinsic level. This work describes for the first time real-time measurement software that controls a harmonic load-pull test-bench, thereby allowing the simultaneous evaluation of time-domain waveforms at both the extrinsic and the intrinsic level of a power-transistor. A de-embedding algorithm calculates the intrinsic waveforms from the extrinsic ones, thereby taking into account the effect of the non-linear capacitances within the transistor.","PeriodicalId":257372,"journal":{"name":"77th ARFTG Microwave Measurement Conference","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Real-time non-linear de-embedding\",\"authors\":\"F. Vanaverbeke, W. De Raedt, D. Schreurs, M. Bossche\",\"doi\":\"10.1109/ARFTG77.2011.6034573\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-efficiency operating modes (class B, F, D, E, etc.) of RF power-transistors can only be well understood and evaluated when the voltage and current time-domain waveforms at the level of the intrinsic current-generator of the transistor are known. Large-signal network analyzers (LSNA's) allow the measurement of time-domain waveforms at the extrinsic level. This work describes for the first time real-time measurement software that controls a harmonic load-pull test-bench, thereby allowing the simultaneous evaluation of time-domain waveforms at both the extrinsic and the intrinsic level of a power-transistor. A de-embedding algorithm calculates the intrinsic waveforms from the extrinsic ones, thereby taking into account the effect of the non-linear capacitances within the transistor.\",\"PeriodicalId\":257372,\"journal\":{\"name\":\"77th ARFTG Microwave Measurement Conference\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"77th ARFTG Microwave Measurement Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG77.2011.6034573\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"77th ARFTG Microwave Measurement Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG77.2011.6034573","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-efficiency operating modes (class B, F, D, E, etc.) of RF power-transistors can only be well understood and evaluated when the voltage and current time-domain waveforms at the level of the intrinsic current-generator of the transistor are known. Large-signal network analyzers (LSNA's) allow the measurement of time-domain waveforms at the extrinsic level. This work describes for the first time real-time measurement software that controls a harmonic load-pull test-bench, thereby allowing the simultaneous evaluation of time-domain waveforms at both the extrinsic and the intrinsic level of a power-transistor. A de-embedding algorithm calculates the intrinsic waveforms from the extrinsic ones, thereby taking into account the effect of the non-linear capacitances within the transistor.