{"title":"具有高共模抑制比的等离子体砷化镓平衡金属-半导体-金属光电探测器","authors":"A. Karar, C. Tan, K. Alameh, Y. T. Lee","doi":"10.1109/HONET.2012.6421456","DOIUrl":null,"url":null,"abstract":"We propose and demonstrate a plasmonic-based GaAs balanced metal-semiconductor-metal photodetector (BMSM-PD) structure. A dual-beam FIB/SEM is employed for the fabrication of the metal nano-gratings and slits of the B-MSMPD. A common mode rejection ratio (CMRR) value less than 25 dB at 830nm wavelength, dependent on the applied bias, is measured. This adequate CMRR value indicates that the BMSM-PD structure substantially suppresses laser intensity noise, making it suitable for ultra-high-speed optical telecommunication systems. In addition, this work paves the way for the monolithic integration of B-MSM-PDs into large scale semiconductor circuits.","PeriodicalId":334187,"journal":{"name":"High Capacity Optical Networks and Emerging/Enabling Technologies","volume":"4 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Plasmonic-based GaAs balanced metal-semiconductor-metal photodetector with high common mode rejection ratio\",\"authors\":\"A. Karar, C. Tan, K. Alameh, Y. T. Lee\",\"doi\":\"10.1109/HONET.2012.6421456\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose and demonstrate a plasmonic-based GaAs balanced metal-semiconductor-metal photodetector (BMSM-PD) structure. A dual-beam FIB/SEM is employed for the fabrication of the metal nano-gratings and slits of the B-MSMPD. A common mode rejection ratio (CMRR) value less than 25 dB at 830nm wavelength, dependent on the applied bias, is measured. This adequate CMRR value indicates that the BMSM-PD structure substantially suppresses laser intensity noise, making it suitable for ultra-high-speed optical telecommunication systems. In addition, this work paves the way for the monolithic integration of B-MSM-PDs into large scale semiconductor circuits.\",\"PeriodicalId\":334187,\"journal\":{\"name\":\"High Capacity Optical Networks and Emerging/Enabling Technologies\",\"volume\":\"4 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"High Capacity Optical Networks and Emerging/Enabling Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HONET.2012.6421456\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"High Capacity Optical Networks and Emerging/Enabling Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HONET.2012.6421456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasmonic-based GaAs balanced metal-semiconductor-metal photodetector with high common mode rejection ratio
We propose and demonstrate a plasmonic-based GaAs balanced metal-semiconductor-metal photodetector (BMSM-PD) structure. A dual-beam FIB/SEM is employed for the fabrication of the metal nano-gratings and slits of the B-MSMPD. A common mode rejection ratio (CMRR) value less than 25 dB at 830nm wavelength, dependent on the applied bias, is measured. This adequate CMRR value indicates that the BMSM-PD structure substantially suppresses laser intensity noise, making it suitable for ultra-high-speed optical telecommunication systems. In addition, this work paves the way for the monolithic integration of B-MSM-PDs into large scale semiconductor circuits.
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