{"title":"低功耗SRAM的测试方法(Iddq测试对低功耗SRAM有用吗?)","authors":"Ilseok Suh, Hong-Sik Kim, Sungho Kang, G. Han","doi":"10.1109/APASIC.2000.896962","DOIUrl":null,"url":null,"abstract":"The increase in integrity of the recent VLSI technology has enabled a trend of small and portable applications. These portable applications, like notebook computers and cellular phones, need the high-performance and low-power consumption. In most products the major power consuming elements are the memories. So low power memory technology has been developed. But the test features have not been studied sufficiently. This paper provides a test methodology useful for low power SRAM's. Also simulation results for the Driving Source Line technology show how useful the Iddq test is.","PeriodicalId":313978,"journal":{"name":"Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Test methodology for low power SRAM's (Is Iddq test useful for low power SRAM's?)\",\"authors\":\"Ilseok Suh, Hong-Sik Kim, Sungho Kang, G. Han\",\"doi\":\"10.1109/APASIC.2000.896962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The increase in integrity of the recent VLSI technology has enabled a trend of small and portable applications. These portable applications, like notebook computers and cellular phones, need the high-performance and low-power consumption. In most products the major power consuming elements are the memories. So low power memory technology has been developed. But the test features have not been studied sufficiently. This paper provides a test methodology useful for low power SRAM's. Also simulation results for the Driving Source Line technology show how useful the Iddq test is.\",\"PeriodicalId\":313978,\"journal\":{\"name\":\"Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APASIC.2000.896962\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APASIC.2000.896962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Test methodology for low power SRAM's (Is Iddq test useful for low power SRAM's?)
The increase in integrity of the recent VLSI technology has enabled a trend of small and portable applications. These portable applications, like notebook computers and cellular phones, need the high-performance and low-power consumption. In most products the major power consuming elements are the memories. So low power memory technology has been developed. But the test features have not been studied sufficiently. This paper provides a test methodology useful for low power SRAM's. Also simulation results for the Driving Source Line technology show how useful the Iddq test is.