低功耗SRAM的测试方法(Iddq测试对低功耗SRAM有用吗?)

Ilseok Suh, Hong-Sik Kim, Sungho Kang, G. Han
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引用次数: 0

摘要

最近VLSI技术的完整性的提高使小型和便携式应用成为可能。这些便携式应用,如笔记本电脑和手机,需要高性能和低功耗。在大多数产品中,主要的功耗元素是存储器。因此,低功耗存储技术得到了发展。但对其测试特征的研究还不够充分。本文提供了一种适用于低功耗SRAM的测试方法。此外,驱动源线技术的仿真结果表明Iddq测试是多么有用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Test methodology for low power SRAM's (Is Iddq test useful for low power SRAM's?)
The increase in integrity of the recent VLSI technology has enabled a trend of small and portable applications. These portable applications, like notebook computers and cellular phones, need the high-performance and low-power consumption. In most products the major power consuming elements are the memories. So low power memory technology has been developed. But the test features have not been studied sufficiently. This paper provides a test methodology useful for low power SRAM's. Also simulation results for the Driving Source Line technology show how useful the Iddq test is.
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