一种经过验证的方法,用于检测光刻胶残留,并通过使用SP2裸晶圆检查和SURFmonitor测量荧光来确定光刻胶材料

Lithography Asia Pub Date : 2009-12-03 DOI:10.1117/12.837020
D. Feiler, S. Radovanovic, P. Dighe, Arul Kitnan, G. Simpson, Gad Schwager, Alexander Eynis, D. Enidjer
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引用次数: 2

摘要

在芯片制造过程中,完全去除光阻是非常关键的。目前的计量和分析方法不能提供足够的灵敏度来检测残留在晶圆片上的光刻胶残留量。使用本研究中描述的新方法,Surfscan SP2和SURFmonitor解决方案成功地证明了检测残留光阻所需的灵敏度。这种方法利用了残余光刻胶会发出荧光的事实,它是有机的。通过使用配备SURFmonitor的SP2 (UV波长)无图案缺陷检测工具在灰化和清洁步骤后扫描晶圆,可以生成全晶圆的荧光SURFimage。这张SURFimage清晰地显示了硅片上残留光刻胶的区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A proven methodology for detecting photo-resist residue and for qualifying photo-resist material by measuring fluorescence using SP2 bare wafer inspection and SURFmonitor
During the chip making process, complete removal of photo-resist is very critical. Current metrology & analytical methods do not provide enough sensitivity to detect residual amounts of photo-resist remaining on the wafer. Using the novel method described in this study, the Surfscan SP2 and SURFmonitor solution has successfully demonstrated the sensitivity needed to detect residual photo-resist. This method takes advantage of the fact that residual photo-resist, which is organic in nature, will fluoresce. By scanning wafers after the ash and clean step using the SP2 (UV wavelength) unpatterned defect inspection tool equipped with SURFmonitor, it is possible to generate a full-wafer fluorescence SURFimage. This SURFimage was shown to clearly indicate the regions of the wafer where residual photoresist was present.
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