在绝缘体上硅(SOI)技术中集成蜂窝手机功率放大器和DC/DC转换器

2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI:10.1109/RFIC.2008.4561466

A. Tombak, R. Baeten, J. Jorgenson, D. Dening

{"title":"在绝缘体上硅(SOI)技术中集成蜂窝手机功率放大器和DC/DC转换器","authors":"A. Tombak, R. Baeten, J. Jorgenson, D. Dening","doi":"10.1109/RFIC.2008.4561466","DOIUrl":null,"url":null,"abstract":"A DC/DC buck converter was integrated with a cellular handset power amplifier (PA) in a silicon-on-insulator (SOI) technology. The technology was designed to allow integration of high-performance reliable RF power devices with the front-end. The power devices uses an LDMOS-based MOS device, called integrated power MOS (IPMOS). A 3-stage power amplifier was designed for GSM850/900 and DCS/PCS bands. The PA achieved typical power added efficiencies (PAE) greater than 60% with Pout ranging from 35.5 to 36.7 dBm at GSM850/900 MHz band, and it achieved typical PAEs in the range of 44 to 49 % with Pout ranging from 33.6 to 33.8 dBm at DCS/PCS band. The PAE was also measured when the DC/DC converter biased the PA. Up to 25-percentage-point improvement in the PAE was observed compared to the case where the output power was controlled by varying the input power. The spurious emissions in the transmit band and the receive band noise were also reported.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Integration of a cellular handset power amplifier and a DC/DC converter in a Silicon-On-Insulator (SOI) technology\",\"authors\":\"A. Tombak, R. Baeten, J. Jorgenson, D. Dening\",\"doi\":\"10.1109/RFIC.2008.4561466\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A DC/DC buck converter was integrated with a cellular handset power amplifier (PA) in a silicon-on-insulator (SOI) technology. The technology was designed to allow integration of high-performance reliable RF power devices with the front-end. The power devices uses an LDMOS-based MOS device, called integrated power MOS (IPMOS). A 3-stage power amplifier was designed for GSM850/900 and DCS/PCS bands. The PA achieved typical power added efficiencies (PAE) greater than 60% with Pout ranging from 35.5 to 36.7 dBm at GSM850/900 MHz band, and it achieved typical PAEs in the range of 44 to 49 % with Pout ranging from 33.6 to 33.8 dBm at DCS/PCS band. The PAE was also measured when the DC/DC converter biased the PA. Up to 25-percentage-point improvement in the PAE was observed compared to the case where the output power was controlled by varying the input power. The spurious emissions in the transmit band and the receive band noise were also reported.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561466\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561466","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

摘要

采用绝缘体上硅(SOI)技术将DC/DC降压变换器与手机功率放大器(PA)集成在一起。该技术旨在实现高性能可靠射频功率器件与前端的集成。功率器件采用基于ldmos的MOS器件，称为集成功率MOS (integrated power MOS)。设计了一种适用于GSM850/900和DCS/PCS频段的三级功率放大器。在GSM850/900 MHz频段，当输出范围为35.5 ~ 36.7 dBm时，该放大器的功率附加效率(PAE)大于60%;在DCS/PCS频段，当输出范围为33.6 ~ 33.8 dBm时，该放大器的功率附加效率(PAE)为44% ~ 49%。当DC/DC变换器偏置PA时，也测量了PAE。与通过改变输入功率来控制输出功率的情况相比，PAE提高了25个百分点。对发射带杂散发射和接收带噪声进行了分析。

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Integration of a cellular handset power amplifier and a DC/DC converter in a Silicon-On-Insulator (SOI) technology

A DC/DC buck converter was integrated with a cellular handset power amplifier (PA) in a silicon-on-insulator (SOI) technology. The technology was designed to allow integration of high-performance reliable RF power devices with the front-end. The power devices uses an LDMOS-based MOS device, called integrated power MOS (IPMOS). A 3-stage power amplifier was designed for GSM850/900 and DCS/PCS bands. The PA achieved typical power added efficiencies (PAE) greater than 60% with Pout ranging from 35.5 to 36.7 dBm at GSM850/900 MHz band, and it achieved typical PAEs in the range of 44 to 49 % with Pout ranging from 33.6 to 33.8 dBm at DCS/PCS band. The PAE was also measured when the DC/DC converter biased the PA. Up to 25-percentage-point improvement in the PAE was observed compared to the case where the output power was controlled by varying the input power. The spurious emissions in the transmit band and the receive band noise were also reported.

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2008 IEEE Radio Frequency Integrated Circuits Symposium

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