{"title":"GaAs-GaAlAs双速度IMPATT二极管的制造与评价","authors":"W. Hoke, R. Traczewski","doi":"10.1109/IEDM.1980.189864","DOIUrl":null,"url":null,"abstract":"Double-velocity IMPATT diodes have been fabricated and cw tested at X-band. From flat-profile single-drift material, 2.2 watts with II percent efficiency was attained. Somewhat higher efficiency was achieved with a High-Low structure. These results exceed previously reported heterojunction diode measurements. The flat-profile results are comparable to the performance of the corresponding GaAs structure. No significant difference was observed in the thermal resistance of the double-velocity diode and the conventional diode.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"197 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and evaluation of GaAs-GaAlAs double-velocity IMPATT diodes\",\"authors\":\"W. Hoke, R. Traczewski\",\"doi\":\"10.1109/IEDM.1980.189864\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Double-velocity IMPATT diodes have been fabricated and cw tested at X-band. From flat-profile single-drift material, 2.2 watts with II percent efficiency was attained. Somewhat higher efficiency was achieved with a High-Low structure. These results exceed previously reported heterojunction diode measurements. The flat-profile results are comparable to the performance of the corresponding GaAs structure. No significant difference was observed in the thermal resistance of the double-velocity diode and the conventional diode.\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"197 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189864\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189864","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and evaluation of GaAs-GaAlAs double-velocity IMPATT diodes
Double-velocity IMPATT diodes have been fabricated and cw tested at X-band. From flat-profile single-drift material, 2.2 watts with II percent efficiency was attained. Somewhat higher efficiency was achieved with a High-Low structure. These results exceed previously reported heterojunction diode measurements. The flat-profile results are comparable to the performance of the corresponding GaAs structure. No significant difference was observed in the thermal resistance of the double-velocity diode and the conventional diode.
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