{"title":"基于热过程模型的高频开关DC-DC变换器集成电路测试","authors":"L. Potapov, A. N. Shkolin, A. Drakin","doi":"10.1109/SIBCON.2019.8729561","DOIUrl":null,"url":null,"abstract":"The work is devoted to the method of accelerated experimental determination of thermal resistances “junction-to-case” and “case-to-ambient” of high-frequency switching DC-DC converter ICs using a transient thermal response (TTR) obtained on the basis of the electro-thermal model. The method is focused on total production control of thermal parameters of microelectronics industry products. The option of creating an electro-thermal model according to the Foster scheme is considered. The possibility of determining the thermal resistances “junction-to-case” and “case-to-ambient” of the high-frequency switching DC-DC converter ICs using the transient thermal response when it is approximated by two exponential functions is revealed. A technique for obtaining an approximating dependence for transient thermal response using an operator method for finding a solution describing the transient process in the Foster scheme is shown. The simulation results and experimental data obtained using the automated test equipment (ATE) based on PXIe platform by National Instruments are presented. The method is protected by a patent.","PeriodicalId":408993,"journal":{"name":"2019 International Siberian Conference on Control and Communications (SIBCON)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"IC Testing of High-Frequency Switching DC-DC Converter Using Models of Thermal Processes\",\"authors\":\"L. Potapov, A. N. Shkolin, A. Drakin\",\"doi\":\"10.1109/SIBCON.2019.8729561\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work is devoted to the method of accelerated experimental determination of thermal resistances “junction-to-case” and “case-to-ambient” of high-frequency switching DC-DC converter ICs using a transient thermal response (TTR) obtained on the basis of the electro-thermal model. The method is focused on total production control of thermal parameters of microelectronics industry products. The option of creating an electro-thermal model according to the Foster scheme is considered. The possibility of determining the thermal resistances “junction-to-case” and “case-to-ambient” of the high-frequency switching DC-DC converter ICs using the transient thermal response when it is approximated by two exponential functions is revealed. A technique for obtaining an approximating dependence for transient thermal response using an operator method for finding a solution describing the transient process in the Foster scheme is shown. The simulation results and experimental data obtained using the automated test equipment (ATE) based on PXIe platform by National Instruments are presented. The method is protected by a patent.\",\"PeriodicalId\":408993,\"journal\":{\"name\":\"2019 International Siberian Conference on Control and Communications (SIBCON)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Siberian Conference on Control and Communications (SIBCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2019.8729561\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Siberian Conference on Control and Communications (SIBCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2019.8729561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
IC Testing of High-Frequency Switching DC-DC Converter Using Models of Thermal Processes
The work is devoted to the method of accelerated experimental determination of thermal resistances “junction-to-case” and “case-to-ambient” of high-frequency switching DC-DC converter ICs using a transient thermal response (TTR) obtained on the basis of the electro-thermal model. The method is focused on total production control of thermal parameters of microelectronics industry products. The option of creating an electro-thermal model according to the Foster scheme is considered. The possibility of determining the thermal resistances “junction-to-case” and “case-to-ambient” of the high-frequency switching DC-DC converter ICs using the transient thermal response when it is approximated by two exponential functions is revealed. A technique for obtaining an approximating dependence for transient thermal response using an operator method for finding a solution describing the transient process in the Foster scheme is shown. The simulation results and experimental data obtained using the automated test equipment (ATE) based on PXIe platform by National Instruments are presented. The method is protected by a patent.