一种用于RF MEMS封装互连/过渡的新型bump-CPW-bump结构

2015 16th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2015-09-03 DOI:10.1109/ICEPT.2015.7236712

Ningjie Li, Yuluan Wu, Lei Chen, Baozhen Wu, Cheng Zhao, Y. Wang, Yue Sun

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引用次数: 3

摘要

提出了一种新的射频微电子机械系统(RF MEMS)器件的一级互连/过渡方法。该方法采用由芯片衬底、在衬底上制作的共面波导(CPW)传输线和在CPW线两端设置一组金属凸起组成的bump-CPW-bump结构，结合了倒装芯片和通硅孔(TSV)技术的优点。有限元分析结果表明，与TSV和线键合结构相比，该互连/过渡结构在宽频率范围内具有良好的回波损耗和插入损耗特性。

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A novel bump-CPW-bump structure for interconnection/transition of RF MEMS packaging

A novel 1-level interconnection/transition method for radio frequency micro-electronic-mechanic system (RF MEMS) devices is proposed in this paper. Using bump-CPW-bump structure which is composed of a chip substrate, a coplanar waveguide (CPW) transmission line fabricated on the substrate and a group of metal bumps set on the ends of the CPW line, this method combines the advantages of both flip-chip and through-silicon via (TSV) techniques. The results of the finite element method (FEM) analysis show that this interconnection/ transition structure has good characteristics of return loss and insertion loss over a broad frequency range compared with both TSV and wire-bonding structures.

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2015 16th International Conference on Electronic Packaging Technology (ICEPT)

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