采用深沟槽刻蚀和外延生长制备500V以上级超结mosfet

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487943

S. Iwamoto, K. Takahashi, H. Kuribayashi, S. Wakimoto, K. Mochizuki, H. Nakazawa

{"title":"采用深沟槽刻蚀和外延生长制备500V以上级超结mosfet","authors":"S. Iwamoto, K. Takahashi, H. Kuribayashi, S. Wakimoto, K. Mochizuki, H. Nakazawa","doi":"10.1109/ISPSD.2005.1487943","DOIUrl":null,"url":null,"abstract":"Above 500V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth are investigated. These SJ-MOSFETs show the lowest specific on-resistance (RonA) of 21.3mOmegacm2 at a breakdown voltage (VB) of 540V, among reported trench-filling type of devices in the same voltage class. These RonA-VB trade-off characteristics are accomplished by optimizing doping concentrations of n- and p- column regions. In addition, low reverse biased leakage current has been achieved by filling deep trenches with defect-free single crystal silicon","PeriodicalId":154808,"journal":{"name":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","volume":"358 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":"{\"title\":\"Above 500V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth\",\"authors\":\"S. Iwamoto, K. Takahashi, H. Kuribayashi, S. Wakimoto, K. Mochizuki, H. Nakazawa\",\"doi\":\"10.1109/ISPSD.2005.1487943\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Above 500V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth are investigated. These SJ-MOSFETs show the lowest specific on-resistance (RonA) of 21.3mOmegacm2 at a breakdown voltage (VB) of 540V, among reported trench-filling type of devices in the same voltage class. These RonA-VB trade-off characteristics are accomplished by optimizing doping concentrations of n- and p- column regions. In addition, low reverse biased leakage current has been achieved by filling deep trenches with defect-free single crystal silicon\",\"PeriodicalId\":154808,\"journal\":{\"name\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"volume\":\"358 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"34\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2005.1487943\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2005.1487943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 34

摘要

研究了用深沟槽刻蚀和外延生长法制备500V以上超结mosfet。这些sj - mosfet在击穿电压(VB)为540V时显示出最低的比导通电阻(RonA)为21.3mOmegacm2，在相同电压等级的沟槽填充型器件中。这些RonA-VB权衡特性是通过优化n和p柱区域的掺杂浓度来实现的。此外，利用无缺陷单晶硅填充深沟槽，实现了低反向偏置漏电流

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Above 500V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

Above 500V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth are investigated. These SJ-MOSFETs show the lowest specific on-resistance (RonA) of 21.3mOmegacm2 at a breakdown voltage (VB) of 540V, among reported trench-filling type of devices in the same voltage class. These RonA-VB trade-off characteristics are accomplished by optimizing doping concentrations of n- and p- column regions. In addition, low reverse biased leakage current has been achieved by filling deep trenches with defect-free single crystal silicon

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

自引率

0.00%

发文量