G. Reichert, T. Ouisse, J. Pelloie, S. Cristoloveanu
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Surface mobility of SOI MOSFET's in the high temperature range: modelling and experiment
The temperature range of silicon components may be substantially extended by using SOI devices. In this paper, we propose a new physical definition of the usual parameters appearing in the empirical models used for expressing the surface mobility. We also present a thorough experimental study of the mobility in thin film SOI MOSFET's, in the temperature range 298-623K. All data agree with the theoretical model, which may thus be used for a physical interpretation of the results from room to high temperature.
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