9.2 mW, 4- 8ghz阻性反馈CMOS LNA，增益24.4 dB，噪声系数2db，输出IP3为21.5 dBm

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.15

B. Perumana, J. Zhan, S. S. Taylor, B. Carlton, J. Laskar

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引用次数: 11

摘要

提出了一种3db带宽为3.94 GHz (4.04 -7.98 GHz)的9.2 mW电阻反馈CMOS低噪声放大器。在5.5 GHz时，完全集成的LNA的测量增益超过24 dB，噪声系数为2 dB，输出IP3为21.5 dBm。LNA从1.2 V电源中吸收7.7 mA，并利用一个紧凑的低q片上电感。LNA采用90纳米CMOS工艺实现，其芯片面积仅为0.022 mm2。

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A 9.2 mW, 4-8 GHz Resistive Feedback CMOS LNA with 24.4 dB Gain, 2 dB Noise Figure, and 21.5 dBm Output IP3

A 9.2 mW resistive feedback CMOS low-noise amplifier with a 3-dB bandwidth of 3.94 GHz (4.04 -7.98 GHz) is presented. At 5.5 GHz, the fully integrated LNA achieves a measured gain above 24 dB, a noise figure of 2 dB, and an output IP3 of 21.5 dBm. The LNA draws 7.7 mA from the 1.2 V supply and utilizes a single compact low-Q on-chip inductor. The LNA is implemented in a 90-nm CMOS process and occupies a die area of only 0.022 mm2.

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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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