利用短转弯时间MOSFET测试结构测量IGBT沟槽mos门控区特性

2018 IEEE International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2018-03-01 DOI:10.1109/ICMTS.2018.8383788

K. Takeuchi, M. Fukui, T. Saraya, K. Itou, S. Suzuki, T. Takakura, T. Hiramoto

{"title":"利用短转弯时间MOSFET测试结构测量IGBT沟槽mos门控区特性","authors":"K. Takeuchi, M. Fukui, T. Saraya, K. Itou, S. Suzuki, T. Takakura, T. Hiramoto","doi":"10.1109/ICMTS.2018.8383788","DOIUrl":null,"url":null,"abstract":"Trench MOSFET test structures were fabricated for evaluating IGBT MOS-gated region performance. It was found that the test structures can be used for measuring saturation and sub-threshold current, though accurate estimation of linear resistance is difficult. Charge pumping measurement can be used to evaluate the oxide/substrate interface quality, for possible application to process optimization.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Measurement of IGBT trench MOS-gated region characteristics using short turn-around-time MOSFET test structures\",\"authors\":\"K. Takeuchi, M. Fukui, T. Saraya, K. Itou, S. Suzuki, T. Takakura, T. Hiramoto\",\"doi\":\"10.1109/ICMTS.2018.8383788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Trench MOSFET test structures were fabricated for evaluating IGBT MOS-gated region performance. It was found that the test structures can be used for measuring saturation and sub-threshold current, though accurate estimation of linear resistance is difficult. Charge pumping measurement can be used to evaluate the oxide/substrate interface quality, for possible application to process optimization.\",\"PeriodicalId\":271839,\"journal\":{\"name\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2018.8383788\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

为了评估IGBT mos门控区性能，制作了沟槽MOSFET测试结构。研究发现，该测试结构可用于测量饱和电流和亚阈值电流，但难以准确估计线性电阻。电荷泵送测量可用于评估氧化物/衬底界面质量，可用于工艺优化。

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Measurement of IGBT trench MOS-gated region characteristics using short turn-around-time MOSFET test structures

Trench MOSFET test structures were fabricated for evaluating IGBT MOS-gated region performance. It was found that the test structures can be used for measuring saturation and sub-threshold current, though accurate estimation of linear resistance is difficult. Charge pumping measurement can be used to evaluate the oxide/substrate interface quality, for possible application to process optimization.

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来源期刊

2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)

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