半导体掺杂二氧化硅玻璃的溶胶-凝胶制备及其光学性能

W. Shi, Liang-ying Zhang, X. Yao
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引用次数: 0

摘要

采用溶胶-凝胶法和原位生长技术制备了半导体(Zn/sub x/Cd/sub 1-x/S)掺杂二氧化硅玻璃。利用x射线衍射技术对材料的结构进行了表征,从x射线衍射图中估计半导体晶体的粒径小于10 nm。从吸收光谱中可以看出,随着Zn含量的增加,吸收边向短波方向移动,通过控制Zn含量可以将吸收边从2.46 eV调节到2.96 eV。采用简并四波混频(DFWM)技术研究了8ns脉冲激光在532 nm波长下的三阶非线性光磁化率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sol-gel preparation and optical properties of semiconductor doped silica glasses
Semiconductor (Zn/sub x/Cd/sub 1-x/S) doped silica glasses were prepared by sol-gel process and in-situ growth technique. The structure of the materials was characterized by X-ray diffraction technique, the particles size of semiconductor crystallites from X-ray patterns were estimated less than 10 nm. From absorption spectra, we obtained that the absorption edges shifted to short wavelength direction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third-order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.
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