{"title":"半导体掺杂二氧化硅玻璃的溶胶-凝胶制备及其光学性能","authors":"W. Shi, Liang-ying Zhang, X. Yao","doi":"10.1109/ISE.1996.578095","DOIUrl":null,"url":null,"abstract":"Semiconductor (Zn/sub x/Cd/sub 1-x/S) doped silica glasses were prepared by sol-gel process and in-situ growth technique. The structure of the materials was characterized by X-ray diffraction technique, the particles size of semiconductor crystallites from X-ray patterns were estimated less than 10 nm. From absorption spectra, we obtained that the absorption edges shifted to short wavelength direction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third-order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.","PeriodicalId":425004,"journal":{"name":"9th International Symposium on Electrets (ISE 9) Proceedings","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sol-gel preparation and optical properties of semiconductor doped silica glasses\",\"authors\":\"W. Shi, Liang-ying Zhang, X. Yao\",\"doi\":\"10.1109/ISE.1996.578095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semiconductor (Zn/sub x/Cd/sub 1-x/S) doped silica glasses were prepared by sol-gel process and in-situ growth technique. The structure of the materials was characterized by X-ray diffraction technique, the particles size of semiconductor crystallites from X-ray patterns were estimated less than 10 nm. From absorption spectra, we obtained that the absorption edges shifted to short wavelength direction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third-order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.\",\"PeriodicalId\":425004,\"journal\":{\"name\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISE.1996.578095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Electrets (ISE 9) Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISE.1996.578095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sol-gel preparation and optical properties of semiconductor doped silica glasses
Semiconductor (Zn/sub x/Cd/sub 1-x/S) doped silica glasses were prepared by sol-gel process and in-situ growth technique. The structure of the materials was characterized by X-ray diffraction technique, the particles size of semiconductor crystallites from X-ray patterns were estimated less than 10 nm. From absorption spectra, we obtained that the absorption edges shifted to short wavelength direction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third-order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.