R. Aliev, J. Ziyoitdinov, J. Gulomov, M. Abduvohidov, B. Urmanov
{"title":"采用数字模拟方法研究温度对硅太阳能电池光电过程的影响","authors":"R. Aliev, J. Ziyoitdinov, J. Gulomov, M. Abduvohidov, B. Urmanov","doi":"10.37681/2181-1652-019-x-2021-2-10","DOIUrl":null,"url":null,"abstract":"the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p- n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platin um nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo -electric parameters of solar cells for various values of temperature are defined","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"STUDYING THE INFLUENCE OF TEMPERATURE ON PHOTOELECTRIC PROCESSES IN SILICON SOLAR CELLS USING DIGITAL SIMULATION\",\"authors\":\"R. Aliev, J. Ziyoitdinov, J. Gulomov, M. Abduvohidov, B. Urmanov\",\"doi\":\"10.37681/2181-1652-019-x-2021-2-10\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p- n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platin um nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo -electric parameters of solar cells for various values of temperature are defined\",\"PeriodicalId\":153395,\"journal\":{\"name\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37681/2181-1652-019-x-2021-2-10\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-2-10","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
STUDYING THE INFLUENCE OF TEMPERATURE ON PHOTOELECTRIC PROCESSES IN SILICON SOLAR CELLS USING DIGITAL SIMULATION
the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p- n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platin um nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo -electric parameters of solar cells for various values of temperature are defined
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