{"title":"用于HEV应用的超薄400V FS IGBT","authors":"Heike Boving, T. Laska, A. Pugatschow, W. Jakobi","doi":"10.1109/ISPSD.2011.5890791","DOIUrl":null,"url":null,"abstract":"400V IGBT and freewheeling diode as well based on 40μm thin wafer technology have been developed for electric and hybrid electric vehicles with a DC link voltage of 120V to 200V. First prototype ultrathin devices worldwide showed clearly reduced overall losses since both on state and switching losses are directly dependent on the chip thickness. The new 40μm chips also exhibited a very high dI/dt during switching resulting in high voltage overshoots exceeding the maximum allowed breakdown voltage of 400V. For this reason an overall stray inductance as small as possible is required to make use of the fast switching behavior of the new devices. Optimization of the switching behavior of both IGBT and Diode could be obtained by adapting dI/dt to an overall stray inductance of 33nH but still with reduced losses at the same time. On state voltage of both IGBT and Diode could be decreased by about 200mV. Turn off energy loss could be decreased by 10%, total losses of IGBT and Diode during turn on could be reduced by about 10% in comparison to standard 650V devices","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Ultrathin 400V FS IGBT for HEV applications\",\"authors\":\"Heike Boving, T. Laska, A. Pugatschow, W. Jakobi\",\"doi\":\"10.1109/ISPSD.2011.5890791\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"400V IGBT and freewheeling diode as well based on 40μm thin wafer technology have been developed for electric and hybrid electric vehicles with a DC link voltage of 120V to 200V. First prototype ultrathin devices worldwide showed clearly reduced overall losses since both on state and switching losses are directly dependent on the chip thickness. The new 40μm chips also exhibited a very high dI/dt during switching resulting in high voltage overshoots exceeding the maximum allowed breakdown voltage of 400V. For this reason an overall stray inductance as small as possible is required to make use of the fast switching behavior of the new devices. Optimization of the switching behavior of both IGBT and Diode could be obtained by adapting dI/dt to an overall stray inductance of 33nH but still with reduced losses at the same time. On state voltage of both IGBT and Diode could be decreased by about 200mV. Turn off energy loss could be decreased by 10%, total losses of IGBT and Diode during turn on could be reduced by about 10% in comparison to standard 650V devices\",\"PeriodicalId\":132504,\"journal\":{\"name\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2011.5890791\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890791","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
400V IGBT and freewheeling diode as well based on 40μm thin wafer technology have been developed for electric and hybrid electric vehicles with a DC link voltage of 120V to 200V. First prototype ultrathin devices worldwide showed clearly reduced overall losses since both on state and switching losses are directly dependent on the chip thickness. The new 40μm chips also exhibited a very high dI/dt during switching resulting in high voltage overshoots exceeding the maximum allowed breakdown voltage of 400V. For this reason an overall stray inductance as small as possible is required to make use of the fast switching behavior of the new devices. Optimization of the switching behavior of both IGBT and Diode could be obtained by adapting dI/dt to an overall stray inductance of 33nH but still with reduced losses at the same time. On state voltage of both IGBT and Diode could be decreased by about 200mV. Turn off energy loss could be decreased by 10%, total losses of IGBT and Diode during turn on could be reduced by about 10% in comparison to standard 650V devices
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