磷扩散过程中硅上厚多晶硅层的结构改变:贡献机制

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI:10.1109/SMICND.1996.557306

F. Gaisenu, C.A. Drimitriadis, J. Stoemenos, C. Postolache, C. Angelis

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引用次数: 0

摘要

在16nm SiO/sub //Si上的LP-LT-CVD厚(1500 nm)多晶硅层的TEM研究允许人们引入特定的机制来解释在短时间(15分钟)中等(1030/spl℃)热处理和随后的20分钟(1030/spl℃)退火过程中多晶硅的快速再生和SiO/sub / 2/降解。

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Structural modifications of the thick polysilicon layers on silicon during phosphorus diffusion: contributing mechanisms

TEM investigations of the LP-LT-CVD thick (1500 nm) polySi layer on 16 nm SiO/sub 2//Si allow one to introduce specific mechanisms to explain the fast polySi regrowth and the SiO/sub 2/ degradation during a short-time (15 min.) moderate (1030/spl deg/C) heat-temperature treatment and during a subsequent 20 min., 1030/spl deg/C annealing.

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1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings

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