Γ-X GaAs/AlAs超晶格的混合

M. Meynadier
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引用次数: 0

摘要

二维约束对超晶格(SLs)和量子阱(qw)中载流子布洛赫波函数对称性的影响越来越引起人们的兴趣。特别是,最近的理论研究已经评估了获得直接或“伪直接”Si/Ge超晶格的可能性,尽管这两种成分都是间接的,通过应变和超周期性的联合作用[1]。在这个仍然很少记录的领域中,可以从更传统的GaAs/AlAs系统中获得有用的见解,其中一个成分是直接的,另一个不是。最近有报道[2,3],只要GaAs层足够薄,这种超晶格就可以间接形成。我们将在这里表明,它们可以通过外加电场进一步从间接调谐到直接调谐。这个实验和其他实验使我们能够证明,在这样的超晶格中,传导最小值是X和Γ状态的组合,具有与超周期性相关的一定程度的混合。我们将讨论造成这种混合的可能机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Γ-X Mixing in GaAs/AlAs Superlattices
There is a growing interest towards understanding the effect of two-dimensional confinement on the symmetry properties of the Bloch wavefunctions of carriers in superlattices (SLs) and quantum wells (QWs). In particular, recent theoretical studies have evaluated the possibilities of obtaining direct or "pseudo-direct" Si/Ge superlattices although both constituents are indirect, through the combined effects of strain and superperiodicity [1]. Useful insights in this still scarsely documented field can be obtained from the more conventional GaAs/AlAs system, in which one of the constituents is direct and the other one is not. It has been reported recently [2,3] that such superlattices could be indirect provided that the GaAs layer was thin enough. We will show here that they can further be continuously tuned from indirect to direct by means of an externally applied electric field. This experiment and others have allowed us to demonstrate that in such superlattices the conduction minimum is a combination of X and Γ states, with a degree of admixture related to the superperiodicity. Possible mechanisms responsible for this mixing will be discussed.
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