{"title":"一种基于k波段vco的超宽带雷达脉冲发生器","authors":"B. Seo, Y. Eo, S. Jung","doi":"10.1109/ISOCC50952.2020.9333093","DOIUrl":null,"url":null,"abstract":"A CMOS K-band impulse generator for UWB radar IC is presented. To provide the short UWB impulse signal, a carrier-based impulse generator is employed, which combines the VCO and active RF switch for windowing the LO signal. The tunability of the center frequency and bandwidth are 22.3 - 25.2 GHz and 0.18 - 3 GHz, respectively. The UWB impulse generator is fabricated in a 65 nm CMOS process and consuming 21.3 mW from a single 1.2-V supply.","PeriodicalId":270577,"journal":{"name":"2020 International SoC Design Conference (ISOCC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A K-band VCO-based Impulse Generator for UWB Radar Sensors\",\"authors\":\"B. Seo, Y. Eo, S. Jung\",\"doi\":\"10.1109/ISOCC50952.2020.9333093\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS K-band impulse generator for UWB radar IC is presented. To provide the short UWB impulse signal, a carrier-based impulse generator is employed, which combines the VCO and active RF switch for windowing the LO signal. The tunability of the center frequency and bandwidth are 22.3 - 25.2 GHz and 0.18 - 3 GHz, respectively. The UWB impulse generator is fabricated in a 65 nm CMOS process and consuming 21.3 mW from a single 1.2-V supply.\",\"PeriodicalId\":270577,\"journal\":{\"name\":\"2020 International SoC Design Conference (ISOCC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International SoC Design Conference (ISOCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISOCC50952.2020.9333093\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC50952.2020.9333093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A K-band VCO-based Impulse Generator for UWB Radar Sensors
A CMOS K-band impulse generator for UWB radar IC is presented. To provide the short UWB impulse signal, a carrier-based impulse generator is employed, which combines the VCO and active RF switch for windowing the LO signal. The tunability of the center frequency and bandwidth are 22.3 - 25.2 GHz and 0.18 - 3 GHz, respectively. The UWB impulse generator is fabricated in a 65 nm CMOS process and consuming 21.3 mW from a single 1.2-V supply.