脆性薄膜断裂韧性表征的显微结构

IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots' Pub Date : 1989-02-20 DOI:10.1109/MEMSYS.1989.77957

L. Fan, R. Howe, R. Muller

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引用次数: 4

摘要

一种用于表征断裂设计参数的简单单掩模技术已应用于拉伸应力低压化学气相沉积氮化硅薄膜。得到的设计参数为临界几何参数，可将其与残余应力相乘，转化为断裂韧性。取值范围为14 ~ 290 μ m/sup 1/2/。假设残余应力为300 MPa，对应的K/sub I/值为4.2 MPa-m/sup 1/2/ ~ 87 MPa-m/sup 1/2/。给出了制作和测试结果。

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Microstructures for fracture toughness characterization of brittle thin films

A simple one-mask technique for characterizing fracture design parameters has been applied to tensile-stressed low-pressure chemical vapor deposited silicon nitride films. The design parameter obtained is the critical geometry parameter, which can be converted into fracture toughness by multiplying by the residual stress. Values of this parameter range from 14 to 290 mu m/sup 1/2/. Corresponding K/sub I/ values are from 4.2 MPa-m/sup 1/2/ to 87 MPa-m/sup 1/2/, assuming a residual stress of 300 MPa. Fabrication and test results are presented.<>

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IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'

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