智能功率SOI技术中后门效应对双极结晶体管的影响

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487962

S. Schwantes, M. Graf, V. Dudek

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引用次数: 6

摘要

本文研究了智能功率SOI技术中后门电极对双极结晶体管(BJTs)的影响。通过测量和设备模拟，讨论了对BJT的影响。结果表明，适当的后门偏置可以显著提高NPN或PNP晶体管的性能。提出了一种优化利用后门效应的设计策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of the back gate effect on bipolar junction transistors in smart power SOI technologies

This work investigates the effect of the back gate electrode on bipolar junction transistors (BJTs) in smart power SOI technologies. The impact on the BJT is discussed by means of measurements and device simulations. It is shown that proper back gate biasing results in a significant performance improvement for either the NPN or the PNP transistor. A design strategy is presented that offers an optimized utilization of the back gate effect.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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