基于原位测量的{311}缺陷新模型

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Pub Date : 2000-12-10 DOI:10.1109/IEDM.2000.904367

M. Law, K. Jones

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引用次数: 7

摘要

本文介绍了{311}缺陷的一种新模型。{311}缺陷是瞬态增强扩散的关键组成部分。该模型基于缺陷的原位TEM退火。原位证据表明{311}缺陷的演化与长度无关。然而，由于缺陷损失率与缺陷数量成正比，因此集成的溶解确实与长度有关。缺陷成核是异质的簇，由植入造成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new model for {311} defects based on in situ measurements

This paper introduces a new model for the {311} defect. The {311} defect is a key component of transient enhanced diffusion. This model is based on in-situ TEM annealing of defects. In-situ evidence suggests that there is no length dependence of the {311} defect evolution. Dissolution of the ensemble does, however, show a dependence on length since the defect loss rate is proportional to the number of defects. Defect nucleation is heterogeneous on clusters that result from the implant.

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International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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