{"title":"基于单分子晶体管的NAND逻辑门设计","authors":"A. Nasri, A. Boubaker, W. Khaldi, A. Kalboussi","doi":"10.1109/DTSS.2019.8915350","DOIUrl":null,"url":null,"abstract":"Here we propose to study the I-V characteristics of the three-terminal molecular devices. The 1.4-Benzenedithiol-Molecular Field Effect Transistor (MFET) model is implemented using Matlab simulator. The modeling results showed good performance. In addition, we used our model under VHDL-AMS to create a logic gate. Specifically, we discussed in detail the operation principle of molecular NAND logic gate.","PeriodicalId":342516,"journal":{"name":"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design of NAND Logic Gate Using a Single Molecule Transistor\",\"authors\":\"A. Nasri, A. Boubaker, W. Khaldi, A. Kalboussi\",\"doi\":\"10.1109/DTSS.2019.8915350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here we propose to study the I-V characteristics of the three-terminal molecular devices. The 1.4-Benzenedithiol-Molecular Field Effect Transistor (MFET) model is implemented using Matlab simulator. The modeling results showed good performance. In addition, we used our model under VHDL-AMS to create a logic gate. Specifically, we discussed in detail the operation principle of molecular NAND logic gate.\",\"PeriodicalId\":342516,\"journal\":{\"name\":\"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTSS.2019.8915350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTSS.2019.8915350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of NAND Logic Gate Using a Single Molecule Transistor
Here we propose to study the I-V characteristics of the three-terminal molecular devices. The 1.4-Benzenedithiol-Molecular Field Effect Transistor (MFET) model is implemented using Matlab simulator. The modeling results showed good performance. In addition, we used our model under VHDL-AMS to create a logic gate. Specifically, we discussed in detail the operation principle of molecular NAND logic gate.