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载波注入变折射率波导阵列的开关特性

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516068
T. Sugio, T. Aoyagi, T. Tanimura, Y. Murakami, K. Shimomura
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引用次数: 1

摘要

我们展示了一种载流子注入型波长开关，该开关由直波导阵列组成，采用选择性MOVPE制备的线性变化折射率分布的GaInAs/InP MQW。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Switching characteristics in variable refractive-index waveguide array by carrier injection
We have demonstrated a carrier-injection-type wavelength switch composed of the straight waveguide array using GaInAs/InP MQW with linearly varying refractive index distribution fabricated by selective MOVPE.
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来源期刊
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)
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