H. Hamada, T. Tsutsumi, G. Itami, H. Sugiyama, H. Matsuzaki, K. Okada, H. Nosaka
{"title":"基于80nm InP-HEMT技术的300-GHz 120gb /s高输出功率高增益无线收发器","authors":"H. Hamada, T. Tsutsumi, G. Itami, H. Sugiyama, H. Matsuzaki, K. Okada, H. Nosaka","doi":"10.1109/BCICTS45179.2019.8972756","DOIUrl":null,"url":null,"abstract":"A 300-GHz wireless transceiver (TRx) with a record data rate of 120 Gb/s was developed using an InP-based high-electron-mobility-transistors (InP-HEMTs). The power amplifier (PA), which is the key component of our TRx, was designed and fabricated to have high output power and gain with a combination of two- and 4-finger HEMTs and a low-impedance inter-stage matching technique. The measured small signal gain of the PA module was larger than 15 dB from 274 to 303 GHz. The saturated output power and output power at 1-dB gain compression point were 12 and 6 dBm, respectively. Using this PA and a 300-GHz fundamental mixer, we constructed our 300-GHz TRx. Wireless data transmissions of the TRx with a link distance of 9.8 m were carried out. Data transmissions of 120 and 100.2 Gb/s were successfully demonstrated for 16QAM and 64QAM, respectively. To the best of our knowledge, these are the highest data rates achieved with an electronics-based TRx around 300 GHz.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology\",\"authors\":\"H. Hamada, T. Tsutsumi, G. Itami, H. Sugiyama, H. Matsuzaki, K. Okada, H. Nosaka\",\"doi\":\"10.1109/BCICTS45179.2019.8972756\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 300-GHz wireless transceiver (TRx) with a record data rate of 120 Gb/s was developed using an InP-based high-electron-mobility-transistors (InP-HEMTs). The power amplifier (PA), which is the key component of our TRx, was designed and fabricated to have high output power and gain with a combination of two- and 4-finger HEMTs and a low-impedance inter-stage matching technique. The measured small signal gain of the PA module was larger than 15 dB from 274 to 303 GHz. The saturated output power and output power at 1-dB gain compression point were 12 and 6 dBm, respectively. Using this PA and a 300-GHz fundamental mixer, we constructed our 300-GHz TRx. Wireless data transmissions of the TRx with a link distance of 9.8 m were carried out. Data transmissions of 120 and 100.2 Gb/s were successfully demonstrated for 16QAM and 64QAM, respectively. To the best of our knowledge, these are the highest data rates achieved with an electronics-based TRx around 300 GHz.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972756\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology
A 300-GHz wireless transceiver (TRx) with a record data rate of 120 Gb/s was developed using an InP-based high-electron-mobility-transistors (InP-HEMTs). The power amplifier (PA), which is the key component of our TRx, was designed and fabricated to have high output power and gain with a combination of two- and 4-finger HEMTs and a low-impedance inter-stage matching technique. The measured small signal gain of the PA module was larger than 15 dB from 274 to 303 GHz. The saturated output power and output power at 1-dB gain compression point were 12 and 6 dBm, respectively. Using this PA and a 300-GHz fundamental mixer, we constructed our 300-GHz TRx. Wireless data transmissions of the TRx with a link distance of 9.8 m were carried out. Data transmissions of 120 and 100.2 Gb/s were successfully demonstrated for 16QAM and 64QAM, respectively. To the best of our knowledge, these are the highest data rates achieved with an electronics-based TRx around 300 GHz.