高q 3D-IPD双工器与高纵横比铜柱电感

Sheng-Chi Hsieh, C. Kung, T. Lee, Hung-Yi Lin, Pao-Nan Lee, Chen-Chao Wang
{"title":"高q 3D-IPD双工器与高纵横比铜柱电感","authors":"Sheng-Chi Hsieh, C. Kung, T. Lee, Hung-Yi Lin, Pao-Nan Lee, Chen-Chao Wang","doi":"10.1109/ESTC.2018.8546371","DOIUrl":null,"url":null,"abstract":"In this paper, a high quality factor 3D-inductor has been demonstrated by 3D-IPD solutionwith tall Cu pillar. It can achieve $\\sim7$:1 aspect ratio vertical connection without expensive TSV or TGV process, and meet the demand of high quality value wafer level process. A maximum quality factor of 60-80 has been achieved for 3D inductors in this study. Moreover, the proposed structure has been adopted to RF diplexer design with 1.0mm*0.5mm size for WiFi applications. The result shows a great performance improvement of lower insertion loss (0.31dB and 0.70dB) and larger attenuation (28dB and 26dB) than 2DIPD diplexer. Based on the measurementresult, the proposed high aspect ratio tall Cu pillar technology has been verified on RF inductors and IPD diplexer, demonstrates good performance, and is a significant promise for commercial wireless radio system.","PeriodicalId":198238,"journal":{"name":"2018 7th Electronic System-Integration Technology Conference (ESTC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-Q 3D-IPD Diplexer with High Aspect Ratio Cu Pillar Inductor\",\"authors\":\"Sheng-Chi Hsieh, C. Kung, T. Lee, Hung-Yi Lin, Pao-Nan Lee, Chen-Chao Wang\",\"doi\":\"10.1109/ESTC.2018.8546371\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a high quality factor 3D-inductor has been demonstrated by 3D-IPD solutionwith tall Cu pillar. It can achieve $\\\\sim7$:1 aspect ratio vertical connection without expensive TSV or TGV process, and meet the demand of high quality value wafer level process. A maximum quality factor of 60-80 has been achieved for 3D inductors in this study. Moreover, the proposed structure has been adopted to RF diplexer design with 1.0mm*0.5mm size for WiFi applications. The result shows a great performance improvement of lower insertion loss (0.31dB and 0.70dB) and larger attenuation (28dB and 26dB) than 2DIPD diplexer. Based on the measurementresult, the proposed high aspect ratio tall Cu pillar technology has been verified on RF inductors and IPD diplexer, demonstrates good performance, and is a significant promise for commercial wireless radio system.\",\"PeriodicalId\":198238,\"journal\":{\"name\":\"2018 7th Electronic System-Integration Technology Conference (ESTC)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 7th Electronic System-Integration Technology Conference (ESTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESTC.2018.8546371\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 7th Electronic System-Integration Technology Conference (ESTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESTC.2018.8546371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文采用高铜柱的3D-IPD解决方案,展示了一种高品质因数的3d电感器。它可以实现$\sim7$:1纵横比垂直连接,无需昂贵的TSV或TGV工艺,满足高品质值晶圆级工艺的需求。在本研究中,3D电感器的最大质量因子达到了60-80。并将该结构应用于WiFi应用中1.0mm*0.5mm尺寸的射频双工器设计。结果表明,与2DIPD双工器相比,该双工器具有更低的插入损耗(0.31dB和0.70dB)和更大的衰减(28dB和26dB)。基于测量结果,所提出的高纵横比高铜柱技术已在射频电感器和IPD双工器上得到验证,性能良好,在商用无线通信系统中具有重要的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Q 3D-IPD Diplexer with High Aspect Ratio Cu Pillar Inductor
In this paper, a high quality factor 3D-inductor has been demonstrated by 3D-IPD solutionwith tall Cu pillar. It can achieve $\sim7$:1 aspect ratio vertical connection without expensive TSV or TGV process, and meet the demand of high quality value wafer level process. A maximum quality factor of 60-80 has been achieved for 3D inductors in this study. Moreover, the proposed structure has been adopted to RF diplexer design with 1.0mm*0.5mm size for WiFi applications. The result shows a great performance improvement of lower insertion loss (0.31dB and 0.70dB) and larger attenuation (28dB and 26dB) than 2DIPD diplexer. Based on the measurementresult, the proposed high aspect ratio tall Cu pillar technology has been verified on RF inductors and IPD diplexer, demonstrates good performance, and is a significant promise for commercial wireless radio system.
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